Tensile Properties of Molybdenum Coated with Titanium Carbide and/or Titanium Nitride by Chemical Vapour Deposition
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چکیده
منابع مشابه
A Review on Titanium Nitride and Titanium Carbide Single and Multilayer Coatings Deposited by Plasma Assisted Chemical Vapor Deposition
In this paper, we reviewed researches about the titanium nitride (TiN) and titanium carbide (TiC) single and multilayer coatings. These coatings were deposited by the plasma assisted chemical vapor deposition (PACVD) technique. Plasma-based technologies are used for the processing of thin films and coatings for different applications such as automobile and aerospace parts, computer disc drives,...
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Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...
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Tin nitride (Sn(x)N(y)) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH(4)Cl at 450 degrees C under a steady flow of NH(3). The Sn(x)N(y) nanowires have an average diameter of 200 nm and lengths >/=5 mum and were grown on Si(111) coated with a few nm's of Au. Nitridation of Sn alone, under a flow o...
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Thermal stability of a-titanium in contact with titanium nitride
The thermal stability of an a-Ti film in contact with a d-TiN film in the structure of a TiN/Ti/TiN film stack on SiO2 substrates was studied by in situ sheet resistance (Rs) measurement, Auger electron spectroscopy, glancing angle x-ray diffractometry, cross-sectional transmission electron microscopy, scanning electron microscopy, and atomic force microscopy. It was found that nitrogen dissolv...
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ژورنال
عنوان ژورنال: Journal of the Japan Institute of Metals and Materials
سال: 1984
ISSN: 0021-4876,1880-6880
DOI: 10.2320/jinstmet1952.48.11_1053